SQ1912EEH
Automotive Dual N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.005
10
-2
10
-3
0.004
I
GSS
- Gate Current (A)
I
GSS
-
Gate
Current (A)
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
T
J
= 150 °C
0.003
T
J
= 25 °C
0.002
T
J
= 25 °C
0.001
0.000
0
4
8
12
16
V
GS
-
Gate-Source
Voltage (V)
10
-10
0
4
8
12
V
GS
- Gate-to-Source Voltage (V)
16
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
2.4
V
GS
= 5 V thru 2 V
2.0
I
D
- Drain Current (A)
I
D
- Drain Current (A)
2.0
1.6
1.6
1.2
1.2
V
GS
= 1.5 V
0.8
0.8
T
C
= 25
°C
0.4
V
GS
= 1 V
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
5
0.4
T
C
= 125
°C
0.0
0.0
T
C
= - 55
°C
1.0
1.5
2.0
2.5
0.0
0.5
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
1.0
2.4
g
fs
- Transconductance (S)
1.8
T
C
= 25
°C
T
C
= 125
°C
R
DS(on)
- On-Resistance (Ω)
T
C
= - 55
°C
0.8
0.6
V
GS
= 1.8 V
0.4
V
GS
= 2.5 V
0.2
V
GS
= 4.5 V
1.2
0.6
0.0
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.0
0.4
0.8
1.2
1.6
2.0
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
3 / 12
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