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SQ1912EEH 参数 Datasheet PDF下载

SQ1912EEH图片预览
型号: SQ1912EEH
PDF下载: 下载PDF文件 查看货源
内容描述: 汽车双N沟道20 V ( DS ) 175 ℃的MOSFET [Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET]
分类和应用:
文件页数/大小: 12 页 / 1063 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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SQ1912EEH
Automotive Dual N-Channel
20 V (D-S) 175 °C MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
d
• 100 % R
g
Tested
• Typical ESD Protection: 800 V
• Compliant to RoHS Directive 2002/95/EC
D
1
D
2
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 4.5 V
R
DS(on)
() at V
GS
= 2.5 V
R
DS(on)
() at V
GS
= 1.8 V
I
D
(A)
Configuration
SOT-363
SC-70 (6-LEADS)
S
1
1
6
D
1
Marking Code
9M
XX
YY
Lot Traceability
and Date Code
Part # Code
20
0.280
0.360
0.450
0.8
Dual
1k
G
1
G
2
1k
G
1
2
5
G
2
D
2
3
4
S
2
Top View
S
1
S
2
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SC-70
SQ1912EEH-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Continuous Source Current (Diode
Pulsed Drain Current
b
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
C
= 25 °C
T
C
= 125 °C
Conduction)
a
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
P
D
T
J
, T
stg
LIMIT
20
± 12
0.8
0.8
0.8
3
1.5
0.5
- 55 to + 175
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount
c
SYMBOL
R
thJA
R
thJF
LIMIT
220
100
UNIT
°C/W
1 / 12
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