AOTF404
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
45
35
25
TA=25°C
TA=150°C
TA=125°C
TA=100°C
15
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
80
60
40
20
0
30
25
20
15
10
5
TA=25°C
0.01
0.1
1
10
100
1000
0
Pulse Width (s)
0
25
50
75
100
125
150
175
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
T
CASE (°C)
Figure 14: Current De-rating (Note B)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=58°C/W
1
0.1
0.01
PD
0.001
Single Pulse
Ton
T
0.0001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
5/6
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