AOTF404
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
10
VDS=50V
ID=20A
8
Ciss
2
6
4
1
Coss
2
Crss
0
0
0
10
20
30
40
0
20
40
60
80
100
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
300
200
100
0
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100µs
1ms
10ms
DC
TJ(Max)=175°C,
TA=25°C
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJC.RθJC
T
1
0.1
RθJC=3.5°C/W
0.01
PD
0.001
Ton
T
Single Pulse
0.00001
0.0001
0.000001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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