AOTF404
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOTF404/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in high voltage
purpose applications.
synchronous rectification , load switching and general
Features
VDS (V) = 105V
ID = 26 A
(VGS =10V)
RDS(ON) < 28 mΩ (VGS =10V)
RDS(ON) < 31 mΩ (VGS = 6V)
TO-220FL
D
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
105
±25
26
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
A
TC=100°C
ID
18
IDM
90
TA=25°C
TA=70°C
5.8
Continuous Drain
Current
IDSM
A
4.5
37
Avalanche Current C
IAR
A
Repetitive avalanche energy L=0.1mH C
EAR
68
mJ
TC=25°C
Power Dissipation B
TC=100°C
43
PD
W
21
TA=25°C
2.2
PDSM
W
Power Dissipation A
TA=70°C
1.38
-55 to 175
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
10
Max
12
Units
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case B
48.5
2.9
58
°C/W
°C/W
Steady-State
Steady-State
RθJC
3.5
1/6
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