AOTF404
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=105V, VGS=0V
105
V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±25V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
100
4
nA
V
VGS(th)
ID(ON)
2.5
90
3.2
A
V
GS=10V, ID=20A
21
39
28
47
31
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=6V, ID=20A
VDS=5V, ID=20A
IS=1A, VGS=0V
23.5
73
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.72
1
Maximum Body-Diode Continuous Current
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1630 2038 2445
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
142
51
204
85
265
119
1.95
V
GS=0V, VDS=0V, f=1MHz
0.65
1.3
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
30.8
6.4
8
38.5
8
46
9.6
14
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=50V, ID=20A
10
12.7
8.2
31.5
11.2
49
V
GS=10V, VDS=50V, RL=2.7Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
34
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
64
ns
Qrr
337
481
625
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev0: Otc. 2008
2/6
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