AOT416
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
di/dt=800A/µs
120
25ºC
Q
rr
(nC)
90
60
30
0
0
5
10
15
20
25
30
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
150
I
s
=20A
120
Q
rr
(nC)
90
60
30
I
rm
0
0
200
400
600
800
Q
rr
25ºC
125ºC
30
25
20
15
125ºC
25ºC
10
5
I
rm
(A)
30
27
24
21
t
rr
(ns)
18
15
12
9
6
3
0
1000
0
0
200
400
600
800
25ºC
125º
S
0.5
0
1000
1
25ºC
t
rr
1.5
S
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
125ºC
I
s
=20A
2
Q
rr
I
rm
125ºC
10
25ºC
5
0
125ºC
30
25
20
I
rm
(A)
15
24
20
16
t
rr
(ns)
12
8
4
0
0
5
10
15
25ºC
20
25
30
t
rr
di/dt=800A/µs
125ºC
2.5
25ºC
2
1.5
1
125ºC
0.5
0
3
S
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
2.5
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
6/7
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