AOT416
100V N-Channel MOSFET
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=100V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±25V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=7V, I
D
=15A
Forward Transconductance
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
950
V
GS
=0V, V
DS
=50V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
77
21
0.4
15
V
GS
=10V, V
DS
=50V, I
D
=20A
5.5
3.5
V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
2
Min
100
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
50
100
2.8
110
31
T
J
=125°C
55
35
28
0.68
1
95
1180
110
36
0.8
19
7
6.3
10
7.2
15
7
13
50
19
70
25
90
1450
145
50
1.2
23
8.5
9
37
66
43
3.4
4
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
2/7
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