AOT416 参数 Datasheet PDF下载

AOT416

100V N-Channel MOSFET

General Description

The AOT416 is fabricated with SDMOS

TM

trench technology that combines excellent R

DS(ON)

with low gate

charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited

for PWM, load switching and general purpose applications.

Features

V

DS

I

D

(at V

GS

=10V)

R

DS(ON)

(at V

GS

=10V)

R

DS(ON)

(at V

GS

= 7V)

100V

42A

< 37mΩ

< 43mΩ

D

G

S

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

Parameter

Symbol

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

Pulsed Drain Current

Continuous Drain

Current

Avalanche Current

C

C

C

Maximum

100

±25

42

30

110

4.7

3.8

28

39

150

75

1.92

1.23

-55 to 175

Units

V

V

A

T

C

=25°C

T

C

=100°C

T

A

=25°C

T

A

=70°C

I

D

I

DM

I

DSM

I

AS

, I

AR

E

AS

, E

AR

P

D

P

DSM

T

J

, T

STG

A

A

mJ

W

W

°C

Avalanche energy L=0.1mH

Power Dissipation

Power Dissipation

B

T

C

=25°C

T

C

=100°C

T

A

=25°C

A

T

A

=70°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

AD

Maximum Junction-to-Ambient

Maximum Junction-to-Case

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

11.6

54

0.7

Max

13.9

65

1

Units

°C/W

°C/W

°C/W

1/7

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