AOT416
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
40
I
D
(A)
I
D
(A)
7V
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
50
45
R
DS(ON)
(m
Ω
)
40
35
30
25
20
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
V
GS
=7V
Normalized On-Resistance
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
V
GS
=7V
I
D
=15A
V
GS
=10V
I
D
=20A
6V
V
GS
=5V
0
3
4
5
6
7
8
9
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
8V
60
50
40
30
20
10
125°C
25°C
V
DS
=5V
V
GS
=10V
17
5
2
10
70
I
D
=20A
60
R
DS(ON)
(m
Ω
)
50
40
30
25°C
20
6
7
8
9
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+00
125°C
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.2
0.4
125°C
40
25°C
3/7
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