AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
I
D
(A), Peak Avalanche Current
Power Dissipation (W)
120
100
80
60
40
20
0
1.0E-05
1.0E-04
1.0E-03
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
80
T
C
=25°C
60
40
20
1.0E-06
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
80
100
T
J(Max
)
=150°C
T
A
=25°C
Current rating I
D
(A)
60
Power (W)
0
25
50
75
100
125
150
175
80
60
40
40
20
20
0
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJc
.R
θJc
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.00001
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
0.01
0.1
1
T
on
T
0.0001
0.001
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
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