AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
10
20
30
40
50
60
70
80
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=20A
Capacitance (nF)
6000
5000
C
iss
4000
3000
2000
C
oss
1000
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
rss
100.0
100µs
1ms
10000
T
J(Max)
=175°C
T
C
=25°C
1000
I
D
(Amps)
10.0
R
DS(ON)
limited
10ms
100ms
DC
Power (W)
100
100
T
J(Max)
=175°C
T
C
=25°C
1.0
0.1
1
10
10
0.0001
0.01
0.1
1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJc
.R
θJc
R
θJC
=1.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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