AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
H
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
T
J
=125°C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
T
J
=125°C
Min
30
Typ
Max
Units
V
0.1
20
±100
1.4
80
3.5
5.5
4.4
90
0.36
0.5
65
3940
5120
4.2
6.6
5.5
1.8
2.5
mA
nA
V
A
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode + Schottky Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=15V, f=1MHz
590
255
0.72
73
1.1
95
Ω
nC
nC
nC
nC
ns
ns
ns
ns
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=300A/µs
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=300A/µs
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
V
GS
=10V, V
DS
=15V, I
D
=20A
35
10.4
12.4
9.8
8.4
45
10
36
32
43
ns
nC
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C. The power dissipation P
DSM
and current rating I
DSM
are
based on T
J(MAX)
=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1
ST
2008)
Rev3: July. 2008
2/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
