AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
10V
60
80
4.5V
3.5V
40
V
GS
=3.0V
I
D
(A)
60
100
V
DS
=5V
I
D
(A)
40
20
20
25°C
0
0
0.5
1
1.5
2
2.5
3
V
DS
(Volts)
Figure 1: On-Region Characteristics
0
1
1.5
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
4
125°C
5
Normalized On-Resistance
1.9
I
D
=20A
1.7
1.5
1.3
1.1
0.9
0.7
0
5
10
15
20
25
30
-40
-15
10
35
60
85
110 135 160 185
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5V
V
GS
=10V
4.5
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
4
V
GS
=10V
3.5
3
12
I
D
=20A
10
R
DS(ON)
(m
Ω
)
100
10
125°C
125°C
I
S
(A)
8
1
6
0.1
25°C
4
25°C
2
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
3/6
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