AOD603A 参数 Datasheet PDF下载

AOD603A

60V Complementary MOSFET

N-Channel Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=60V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

= ±20V

V

DS

=V

GS

I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=12A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=4.5V, I

D

=8A

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=12A

I

S

=1A,V

GS

=0V

T

J

=125°

C

1

30

47

90

67

22

0.74

1

12

360

V

GS

=0V, V

DS

=30V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

40

16

0.6

450

61

27

1.35

7.5

V

GS

=10V, V

DS

=30V, I

D

=12A

3.8

1.2

1.9

4.2

V

GS

=10V, V

DS

=30V, R

L

=2.5Ω,

R

GEN

=3Ω

I

F

=12A, dI/dt=100A/µs

2

Min

60

Typ

Max

Units

V

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

1

5

±100

2.4

3

60

110

85

µA

nA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

ns

ns

Maximum Body-Diode Continuous Current

G

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

540

80

40

2

10

5

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=12A, dI/dt=100A/µs

3.4

16

2

27

30

35

ns

nC

A. The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The

C.

Power dissipation P

DSM

is based on R

θJA

and the maximum allowed junction temperature of 150° The value in any given application depends

C.

on the user's specific board design, and the maximum temperature of 175° may be used if the PCB allow s it.

C

C,

B. The power dissipation P

D

is based on T

J(MAX)

=175° using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=175° Ratings are based on low frequency and duty cycles to keep

initial T

J

=25°

C.

D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T

J(MAX)

=175° The SOA curve provides a single pulse ratin g.

C.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°

C.

2/11

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