AOD603A
60V Complementary MOSFET
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
-5V
25
20
-I
D
(A)
9
15
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
230
Normalized On-Resistance
210
190
R
DS(ON)
(m
Ω
)
170
150
130
110
90
70
0
5
10
V
GS
=-10V
V
GS
=-4.5V
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
200
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
V
GS
=-10V
I
D
=-12A
-4V
-I
D
(A)
-7V
-6V
12
-4.5V
15
V
DS
=-5V
6
-3.5V
3
V
GS
=-3V
0
0
1
125°
C
25°
C
2
3
4
5
6
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
17
5
2
10
V
GS
=-4.5V
I
D
=-8A
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
310
I
D
=-12A
270
R
DS(ON)
(m
Ω
)
230
-I
S
(A)
190
150
110
70
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°
C
125°
C
1.0E+01
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°
C
25°
C
8/11
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