AOD603A
60V Complementary MOSFET
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-30V
I
D
=-12A
8
Capacitance (pF)
1000
800
600
400
200
0
0
8
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
4
16
0
0
C
rss
30
40
50
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
20
60
C
oss
1400
1200
C
iss
-V
GS
(Volts)
6
4
2
1000.0
100.0
-I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
10
-V
DS
(Volts)
100
1000
10µs
10µs
Power (W)
R
DS(ON)
limited
DC
T
J(Max)
=175°
C
T
C
=25°
C
200
160
120
80
40
0
0.0001
T
J(Max)
=175°
C
T
C
=25°
C
100µs
1ms
10ms
17
5
2
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=3.5°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
9/11
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
