AOD603A
60V Complementary MOSFET
General Description
The AOD603A uses advanced trench technology MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
N-Channel
V
DS
= 60V
I
D
= 13A (V
GS
=10V)
R
DS(ON)
< 60m
< 85m
(V
GS
=10V)
(V
GS
=4.5V)
P-Channel
-60V
-13A (V
GS
=-10V)
R
DS(ON)
< 115m
< 150m
(V
GS
=-10V)
(V
GS
=-4.5V)
D1
D2
G1
S1
G2
S2
N-channel
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
P-channel
Symbol
V
DS
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
Max N-channel
60
±20
12
9.5
30
3.5
3
19
18
27
13.5
2
1.3
-55 to 175
Max P-channel
-60
±20
-12
-9.5
-30
-3
-2.5
25
31
42.5
21.5
2
1.3
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter N-channel
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Parameter P-channel
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Symbol
R
θJA
R
θJC
Typ
19
50
4
Typ
19
50
2.5
Max
23
60
5.5
Max
23
60
3.5
Units
°
C/W
°
C/W
°
C/W
Units
°
C/W
°
C/W
°
C/W
1/11
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
