AOT482L/AOB482L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
240
200
160
Q
rr
(nC)
120
80
40
0
0
5
10
15
20
25
30
I
rm
25ºC
Q
rr
25ºC
125ºC
di/dt=800A/µs
125ºC
50
45
40
35
I
rm
(A)
30
25
20
15
10
5
0
35
30
25
t
rr
(ns)
20
15
10
5
0
0
5
10
15
20
25
30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
50
I
s
=20A
125ºC
40
30
25ºC
Q
rr
50
I
rm
0
0
200
400
600
800
25ºC
0
1000
0
0
200
400
600
800
125ºC
20
10
40
30
20
25ºC
10
125ºC
0
1000
125ºC
t
rr
25ºC
S
1
0.5
2
1.5
S
2.5
25ºC
S
0.5
125º
0
1
t
rr
25ºC
di/dt=800A/µs
125ºC
3
2.5
2
1.5
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
250
I
s
=20A
200
Q
rr
(nC)
150
100
50
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
t
rr
(ns)
I
rm
(A)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
6/7
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