AOT482L/AOB482L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=40V
I
D
=20A
Capacitance (pF)
6000
5000
C
iss
4000
3000
2000
C
oss
1000
0
0
10
30
40
50
60
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
70
0
10
30
40
50
60
70
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
80
C
rss
8
V
GS
(Volts)
6
4
2
0
1000.0
100.0
I
D
(Amps)
10.0
DC
1.0
0.1
0.0
0.01
T
J(Max)
=175°C
T
C
=25°C
R
DS(ON)
limited
10µs
10µs
100µs
Power (W)
1ms
10ms
5000
4000
3000
2000
1000
0
1E-05 0.0001 0.001
T
J(Max)
=175°C
T
C
=25°C
17
5
2
10
0.1
1
10
V
DS
(Volts)
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
P
D
0.01
T
on
Single Pulse
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/7
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