AOT482L/AOB482L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
I
AR
(A) Peak Avalanche Current
350
T
A
=25°C
100
T
A
=150°C
10
T
A
=125°C
300
T
A
=100°C
Power Dissipation (W)
250
200
150
100
50
1
1
10
100
1000
Time in avalanche, t
A
(µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
120
100
Current rating I
D
(A)
80
60
40
20
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
1000
T
A
=25°C
Power (W)
100
10
17
5
2
10
1
0.01
1
100
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/7
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