AOT482L/AOB482L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
I
D
(A)
I
D
(A)
5.5V
40
20
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
R
DS(ON)
(mΩ)
8
6
V
GS
=10V
4
2
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
5
10
V
GS
=7V
Normalized On-Resistance
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
V
GS
=10V
I
D
=20A
10V
100
7V
6V
80
60
40
125°C
V
GS
=5V
20
0
3
4
5
6
7
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
25°C
V
DS
=5V
17
5
2
V
GS
=7V
10
I
D
=20A
16
I
D
=20A
14
12
10
8
6
4
5
6
7
8
9
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
I
S
(A)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
0.0
0.2
125°C
25°C
R
DS(ON)
(mΩ)
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/7
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
