AO6808
Dual N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
3
6
9
12
15
18
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000
V
DS
= 10V
I
D
= 6A
Capacitance (pF)
800
C
iss
600
400
200
C
rss
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
100
R
DS(ON)
limited
1000
T
J(Max)
=150°C
T
A
=25°C
10
10µs
100µs
100
Power (W)
100
I
D
(Amps)
1
1ms
10ms
100ms
T
J(Max)
=150°C
T
A
=25°C
0.1
1
DC
10s
10
0.1
1
0.01
I
F
=-6.5A, dI/dt=100A/µs
10
0.1
0.00001
0.001
0.1
10
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=150°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
4/4
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