AO6808 参数 Datasheet PDF下载

AO6808

Dual N-Channel Enhancement Mode Field

Effect Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

4.5V

50

2.5V

40

I

D

(A)

I

D

(A)

30

20

10

0

0

1

2

3

4

5

V

DS

(Volts)

Figure 1: On-Region Characteristics

26

Normalized On-Resistance

25

24

R

DS(ON)

(m

Ω

)

23

22

21

20

19

0

4

8

V

GS

= 4.5V

V

GS

= 4.0V

V

GS

= 3.1V

V

GS

= 2.5V

1.6

V

GS

= 4.5V

I

D

= 6A

V

GS

=1.5V

10

125°C

0

0.5

1

1.5

2

2.5

3

V

GS

(Volts)

Figure 2: Transfer Characteristics

25°C

20

30

3V

40

V

DS

= 5V

2V

1.4

1.2

1.0

I

F

=-6.5A,

16

dI/dt=100A/µs

12

20

0.8

0

25

50

75

100

125

150

175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

1E+02

I

D

(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

55

I

D

= 6.0A

45

R

DS(ON)

(m

Ω

)

I

S

(A)

1E+01

1E+00

1E-01

125°C

35

1E-02

25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

1E-03

COMPONENTS IN LIFE SUPPORT DEVICES125°C

OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

1E-04

25

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

25°C

15

1

2

3

4

5

6

7

8

1E-05

1E-06

9

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD

(Volts)

Figure 6: Body-Diode Characteristics

V

GS

(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

3/4

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