AO6808 参数 Datasheet PDF下载

AO6808

Dual N-Channel Enhancement Mode Field

Effect Transistor

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Conditions

I

D

= 250µA, V

GS

= 0V

V

DS

= 20V, V

GS

= 0V

T

J

= 55°C

V

DS

= 0V, V

GS

= ±10V

V

DS

= V

GS

I

D

= 250µA

V

GS

= 4.5V, V

DS

= 5V

V

GS

= 4.5V, I

D

= 6.0A

T

J

=125°C

R

DS(ON)

Static Drain-Source On-Resistance

V

GS

= 4.0V, I

D

= 5.5A

V

GS

= 3.1V, I

D

= 5A

V

GS

= 2.5V, I

D

= 2A

g

FS

V

SD

I

S

Forward Transconductance

V

DS

= 5V, I

D

= 6.0A

I

S

= 1A,V

GS

= 0V

Diode Forward Voltage

Maximum Body-Diode Continuous Current

0.5

60

15

21

15

16

17

19

27

20

21

23

34

0.65

1

1.3

620

V

GS

=0V, V

DS

=10V, f=1MHz

125

64

16.2

V

GS

= 10V, V

DS

= 10V, I

D

= 6A

7.7

1.5

2.7

236

V

GS

=10V, V

DS

=10V, R

L

=1.7Ω,

R

GEN

=3Ω

I

F

=6A, dI/dt=100A/µs

448

9.5

4.1

25

9

33

21

10

780

23

33

25

27

30

0.75

Min

20

1

5

±10

1

Typ

Max

Units

V

µA

µA

V

A

mΩ

mΩ

mΩ

mΩ

S

V

A

pF

pF

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

Output Capacitance

Reverse Transfer Capacitance

pF

nC

nC

nC

nC

ns

ns

µs

µs

ns

nC

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=6A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

= 25°C. in

any given application depends on the user's specific board design. The current rating is based on the t

≤10s

thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using < 300

µs

pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

curve provides a single pulse rating.

Rev0 April 2008

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The SOA

2/4

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