AO6808
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO6808/L uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.
AO6808 and AO6808L are electrically identical.
-RoHS Compliant
-AO6808L is Halogen Free
Features
V
DS
= 20V
I
D
= 6A
(V
GS
= 4.5V)
R
DS(ON)
= 19mΩ (typical) (V
GS
= 4.5V)
R
DS(ON)
= 20mΩ (typical) (V
GS
= 4.0V)
R
DS(ON)
= 21mΩ (typical) (V
GS
= 3.1V)
R
DS(ON)
= 23mΩ (typical) (V
GS
= 2.5V)
D1
TSOP6
Top View
G1
S1
D1/D2
S2
1 6
2 5
3 4
G1
D1/D2
G2
S1
S2
G2
D2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
V
DS
Drain-Source Voltage
20
V
GS
Gate-Source Voltage
±12
Continuous Drain
Current
A
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
6
4.6
60
1.3
0.8
-55 to 150
0.8
0.5
4.6
3.7
Units
V
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
76
118
54
Max
95
150
68
Units
°C/W
°C/W
°C/W
1/4
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
