AO6602
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
V
DS
=-15V
I
D
=-2.7A
250
Capacitance (pF)
200
150
100
50
C
rss
0
0
1
2
Q
g
(nC)
3
4
Figure 7: Gate-Charge Characteristics
5
0
0
5
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
30
C
oss
C
iss
8
-V
GS
(Volts)
6
4
2
100.0
1000
T
A
=25°
C
10.0
10µs
100µs
1ms
-I
D
(Amps)
1.0
10ms
0.1
T
J(Max)
=150°C
T
A
=25°C
DC
10s
0.0
0.01
0.1
1
-V
DS
(Volts)
10
100
Power (W)
R
DS(ON)
limited
100
10
1
0.00001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
0.001
1000
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=150°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
T
on
T
100
1000
0.001
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.001
0.01
8/9
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