AO6602
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=3.5A
8
V
GS
(Volts)
300
250
Capacitance (pF)
200
150
100
C
oss
2
50
0
0
3
4
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
2
5
0
C
rss
15
25
V
DS
(Volts)
20
Figure 8: Capacitance Characteristics
5
10
30
C
iss
6
4
0
100.0
1000
T
A
=25°
C
10.0
10µs
Power (W)
R
DS(ON)
limited
100µs
1ms
10ms
100
I
D
(Amps)
1.0
10
0.1
T
J(Max)
=150°
C
T
A
=25°
C
DC
10s
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
1
0.00001
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=150°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
P
D
Single Pulse
T
on
T
100
1000
0.001
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.001
0.01
4/9
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