AO6602
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
7V
4.5V
4V
8
10
V
DS
=5V
I
D
(A)
3.5V
6
I
D
(A)
9
6
125°
C
4
3
V
GS
=3V
2
25°
C
0
0
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
Normalized On-Resistance
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=2A
V
GS
=10V
I
D
=3.5A
70
60
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
50
40
V
GS
=10V
30
0
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2
4
17
5
2
10
0.8
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
120
I
D
=3.5A
1.0E+02
1.0E+01
100
R
DS(ON)
(m
Ω
)
125°
C
80
40
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
25°
C
25°
C
1.0E-03
1.0E-04
125°
C
60
40
20
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
1.0E-05
0.0
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.2
0.4
3/9
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