AO6602
30V Complementary MOSFET
General Description
The AO6602 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Features
N-Channel
V
DS
= 30V
I
D
= 3.5A (V
GS
=10V)
R
DS(ON)
< 50m
< 70m
(V
GS
=10V)
(V
GS
=4.5V)
P-Channel
-30V
-2.7A (V
GS
=-10V)
R
DS(ON)
< 100m
< 170m
(V
GS
=-10V)
(V
GS
=-4.5V)
D1
D2
Top View
G1
S2
1
2
3
6
5
4
D1
S1
G1
G2
G2
D2
S1
S2
n-channel
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Max n-channel
Drain-Source Voltage
30
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
p-channel
Max p-channel
-30
±20
-2.7
-2.1
-15
1.15
0.73
Units
V
V
A
V
GS
T
A
=25°
C
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
I
D
I
DM
P
D
T
J
, T
STG
±20
3.5
3
20
1.15
0.73
-55 to 150
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°
C/W
°
C/W
°
C/W
1/9
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
