AO4616
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-7A
8
Capacitance (pF)
1600
1400
1200
1000
800
600
400
2
200
C
rss
0
0
15
Q
g
10
(nC)
Figure 7: Gate-Charge Characteristics
5
20
0
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
iss
-V
GS
(Volts)
6
4
100.0
1000
T
A
=25°
C
10.0
10µs
100µs
1ms
-I
D
(Amps)
1.0
10ms
0.1
Power (W)
R
DS(ON)
limited
100
10
T
J(Max)
=150°C
T
A
=25°C
DC
10s
0.0
0.01
0.1
1
10
100
1
0.00001
0.001
0.1
10
1000
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
1
R
θ
JA
=90°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
0.01
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
