AO4616
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4V
25
20
I
D
(A)
I
D
(A)
3V
15
10
5
V
GS
=2.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
1.6
V
GS
=4.5V
I
D
=6A
0
1
1.5
2
2.5
3
3.5
4
10V
3.5V
25
20
15
10
5
125°
C
25°
C
30
V
DS
=5V
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
25
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
20
1.4
1.2
15
V
GS
=10V
10
0
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
1
V
GS
=10V
I
D
=8A
17
5
2
10
0.8
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
0
25
50
40
I
D
=8A
35
30
R
DS(ON)
(m
Ω
)
I
S
(A)
125°
C
25
25°
C
20
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°
C
25°
C
40
15
10
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-04
1.0E-05
0.0
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.2
0.4
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
