AO4616 参数 Datasheet PDF下载

AO4616

30V Complementary MOSFET

P-Channel Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

Min

-30

-1

Typ

Max

Units

V

-5

100

-1.4

-40

17.5

22

33

40

-1

-2.5

830

V

GS

=0V, V

DS

=-15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

125

75

2

15

V

GS

=10V, V

DS

=-15V, I

D

=-7A

7.5

1040

180

125

4

19

9.6

3.6

4.6

10

V

GS

=10V, V

DS

=-15V, R

L

=2.2Ω,

R

GEN

=3Ω

I

F

=-7A, dI/dt=500A/µs

2

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

I

D

=-250µA, V

GS

=0V

V

DS

=-30V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±20V

µA

nA

V

A

V

DS

=V

GS

I

D

=-250µA

V

GS

=-10V, V

DS

=-5V

V

GS

=-10V, I

D

=-7A

T

J

=125°C

V

GS

=-4.5V, I

D

=-3.5A

V

DS

=-5V, I

D

=-7A

I

S

=-1A,V

GS

=0V

-2.0

-2.5

24.5

27.5

24

-0.75

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

ns

ns

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

1250

235

175

6

23

12

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-7A, dI/dt=500A/µs

5.5

26

9

11.5

25

15

32.5

ns

nC

A. The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The value

C.

in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150° using

≤

10s junction-to-ambient thermal resistance.

C,

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150° Ratings are based on low frequency and duty cycles to keep

C.

initialT

J

=25°

C.

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150° The SOA curve provides a single pulse ratin g.

C.