AO4616
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
-10V
50
40
-4.5V
-I
D
(A)
-I
D
(A)
30
20
10
V
GS
=-3V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
40
Normalized On-Resistance
35
R
DS(ON)
(m
Ω
)
30
25
20
15
10
0
10
15
20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
V
GS
=-10V
V
GS
=-4.5V
1.6
V
GS
=-10V
I
D
=-7A
0
0
1
2
3
4
5
20
125°
C
-3.5V
10
25°
C
-7V
-5V
30
40
V
DS
=-5V
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.4
1.2
1
17
5
2
V
GS
=-4.5V
10
I =-3.5A
D
0.8
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
0
25
50
60
I
D
=-7A
1.0E+02
1.0E+01
50
R
DS(ON)
(m
Ω
)
1.0E+00
125°
C
30
25°
C
20
-I
S
(A)
40
40
125°
C
1.0E-01
25°
C
1.0E-02
1.0E-03
1.0E-04
10
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.2
0.4
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
