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SC4607IMSTRT 参数 Datasheet PDF下载

SC4607IMSTRT图片预览
型号: SC4607IMSTRT
PDF下载: 下载PDF文件 查看货源
内容描述: 极低的输入,兆赫操作,高效率同步降压 [Very Low Input, MHz Operation, High Efficiency Synchronous Buck]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管信息通信管理
文件页数/大小: 17 页 / 319 K
品牌: SEMTECH [ SEMTECH CORPORATION ]
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SC4607  
POWER MANAGEMENT  
Application Information (Cont.)  
SC4607 application:  
Where:  
fs = the switching frequency and  
Dmax = maximum duty ratio, 0.97 for the SC4607.  
Input Capacitor Selection:  
The required minimum capacitance for boost capacitor  
will be:  
The input capacitor selection is based on its ripple cur-  
rent level, required capacitance and voltage rating. This  
capacitor must be able to provide the ripple current by  
the switching actions. For the continuous conduction  
mode, the RMS value of the input capacitor can be cal-  
culated from:  
IB  
VD  
Cboost  
=
TW  
Where:  
IB = the boost current and  
VD= discharge ripple voltage.  
Vout (V Vout  
)
in  
ICIN  
= IOMAX  
(RMS)  
2
V
in  
With fs = 300kH, VD=0.3V and IB=50mA, the required  
capacitance for the boost capacitor is:  
This current gives the capacitor’s power loss as follows:  
IB  
VD fs  
1
0.05  
0.3 300k  
1
PCIN = I2  
RCIN(ESR)  
Cboost  
=
Dmax  
=
0.97 = 540nF  
CIN(RMS)  
This capacitor’s RMS loss can be a significant part of the  
total loss in the converter and reduce the overall con-  
verter efficiency. The input ripple voltage mainly depends  
on the input capacitor’s ESR and its capacitance for a  
given load, input voltage and output voltage. Assuming  
that the input current of the converter is constant, the  
required input capacitance for a given voltage ripple can  
be calculated by:  
Power MOSFET Selection:  
The SC4607 can drive an N-MOSFET at the high side  
and an N-MOSFET synchronous rectifier at the low side.  
The use of the high side N-MOSFET will significantly re-  
duce its conduction loss for high current. For the top  
MOSFET, its total power loss includes its conduction loss,  
switching loss, gate charge loss, output capacitance loss  
and the loss related to the reverse recovery of the bot-  
tom diode, shown as follows:  
D (1D)  
fs (V IOMAX RCIN  
CIN = IOMAX  
)
I
(ESR)  
Where:  
D = Vout/Vin , duty ratio and  
VI = the given input voltage ripple.  
ITOP _PEAK  
V
fs  
in  
PTOP _TOTAL = I2  
RTOP _ON  
+
TOP _RMS  
V
GATE RG  
Because the input capacitor is exposed to the large surge  
current, attention is needed for the input capacitor. If  
tantalum capacitors are used at the input side of the  
converter, one needs to ensure that the RMS and surge  
ratings are not exceeded. For generic tantalum capaci-  
tors, it is wise to derate their voltage ratings at a ratio of  
2 to protect these input capacitors.  
(QGD + QGS2 ) + QGT VGATE fs + (QOSS + Qrr ) V fs  
in  
Where:  
RG = gate drive resistor,  
QGD = the gate to drain charge of the top MOSFET,  
QGS2 = the gate to source charge of the top MOSFET,  
QGT = the total gate charge of the top MOSFET,  
QOSS = the output charge of the top MOSFET and  
Qrr = the reverse recovery charge of the bottom diode.  
Boost Capacitor Selection:  
The boost capacitor selection is based on its discharge  
ripple voltage, worst case conduction time and boost  
current. The worst case conduction time Tw can be esti-  
mated as follows:  
For the top MOSFET, it experiences high current and high  
voltage overlap during each on/off transition. But for the  
1
fs  
Tw =  
Dmax  
2005 Semtech Corp.  
11  
www.semtech.com  
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