SFP730
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig 8. On-Resistance Variation
vs. Junction Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
※ Notes :
1. VGS = 10 V
2. ID = 6.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig 10. Maximum Drain Current
vs. Case Temperature
Fig 9. Maximum Safe Operating Area
102
101
100
10-1
7
6
5
4
3
2
1
0
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
DC
※ Notes :
1. TC = 25 o
2. TJ = 150 o
C
C
3. Single Pulse
10-1
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig 11. Transient Thermal Response Curve
100
10-1
10-2
D =0.5
※
N otes
:
0.2
0.1
1. Zθ (t)
=
1.28 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3. TJM TC P DM Zθ (t)
JC
-
=
*
JC
0.05
0.02
0.01
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse D uration [sec]
4/7
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
