SemiWell Semiconductor
SanRex manufactured
SFP730
N-Channel MOSFET
Features
2. Drain
Symbol
{
■ R
(Max 1 Ω )@V =10V
DS(on)
GS
●
■ Gate Charge (Typical 32nC)
◀
▲
■ Improved dv/dt Capability, High ruggedness
■ 100% Avalanche Tested
●
{
1. Gate
●
■ Maximum Junction Temperature Range (150°C)
{
3. Source
General Description
TO-220
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for half bridge and full bridge resonant topolgy like a
electronic lamp ballast.
1
2
3
Absolute Maximum Ratings
Symbol
Parameter
Value
400
Units
VDSS
Drain to Source Voltage
V
A
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
6.5
ID
2.9
26
A
A
V
IDM
(Note 1)
VGS
Gate to Source Voltage
±30
470
EAS
EAR
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
9.8
dv/dt
5.3
V/ns
W
Total Power Dissipation(@TC = 25 °C)
98
PD
Derating Factor above 25 °C
0.78
W/°C
°C
T
STG, TJ
TL
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Value
Symbol
Parameter
Units
Min.
Typ.
Max.
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
-
-
-
-
0.5
-
1.28
-
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
62.5
1/7
December, 2002. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
