SFP730
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
Drain-Source Breakdown Voltage
400
-
-
-
-
V
Δ BVDSS
/
Breakdown Voltage Temperature
coefficient
0.544
V/°C
Δ TJ
V
DS = 400V, VGS = 0V
VDS = 320V, TC = 125 °C
GS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain-Source Leakage Current
10
V
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
100
-100
IGSS
On Characteristics
VGS(th)
V
V
DS = VGS, ID = 250uA
GS =10 V, ID = 3.25A
Gate Threshold Voltage
2.0
-
-
4.0
1
V
Static Drain-Source On-state Resis-
tance
RDS(ON)
0.71
Ω
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
940
100
25
1220
130
32
pF
Coss
Crss
Output Capacitance
VGS =0 V, VDS =25V, f = 1MHz
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
-
-
-
-
-
-
14
14
38
38
230
50
42
-
V
DD =200V, ID =6.5A, RG =50Ω
ns
Turn-off Delay Time
Fall Time
110
20
※ see fig. 13. (Note 4, 5)
Qg
Total Gate Charge
Gate-Source Charge
32
VDS =320V, VGS =10V, ID =6.5A
※ see fig. 12. (Note 4, 5)
Qgs
12
nC
Qgd
Gate-Drain Charge(Miller Charge)
-
4
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Parameter
Test Conditions
Min.
Typ.
Max.
6.5
Unit.
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
-
-
-
-
A
ISM
26
VSD
IS =6.5A, VGS =0V
1.5
V
trr
Reverse Recovery Time
-
-
390
2.2
-
-
ns
uC
IS=6.5A, VGS=0V, dIF/dt=100A/us
Qrr
Reverse Recovery Charge
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 19.4mH, IAS =6.5A, VDD = 50V, RG = 0Ω , Starting TJ = 25°C
3. ISD ≤ 6.5A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
2/7
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
