SFP730
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101
100
10-1
101
Bottom : 4.5 V
150oC
25oC
-55oC
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 50V
2. 250µ s Pulse Test
100
100
101
2
3
4
5
6
7
8
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
2.5
2.0
1.5
1.0
0.5
0.0
101
100
10-1
VGS = 20V
VGS = 10V
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : T = 25℃
J
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
2000
1500
1000
500
0
12
10
8
C
iss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
VDS = 320 V
VDS = 200 V
※ Notes :
1. VGS = 0V
2. f=1MHz
C
6
iss
4
2
Coss
Crss
10
※ Note : ID = 6.5 A
0
0
5
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3/7
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
