SFB95N03L
Fig 7. Breakdown Voltage Variation
Fig 8. On-Resistance Variation
vs. Junction Temperature
vs. Junction Temperature
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
※ Notes :
1. VGS = 10 V
2. ID = 47.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig 10. Maximum Drain Current
vs. Case Temperature
Fig 9. Maximum Safe Operating Area
100
80
60
40
20
0
103
102
101
100
Limited by Package
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
DC
※ Notes :
1. TC = 25 o
2. TJ = 175 o
3. Single Pulse
C
C
10-1
100
101
25
50
75
100
125
150
175
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig 11. Transient Thermal Response Curve
100
10-1
10-2
D=0.5
0.2
※
N otes :
1. Zθ (t) = 1.0 ℃ /W M ax.
JC
0.1
2. D uty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ (t)
JC
0.05
0.02
0.01
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
4/7
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
