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SFB95N03L 参数 Datasheet PDF下载

SFB95N03L图片预览
型号: SFB95N03L
PDF下载: 下载PDF文件 查看货源
内容描述: 逻辑N沟道MOSFET [Logic N-Channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 1188 K
品牌: SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
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SFB95N03L  
Electrical Characteristics ( TC = 25 °C unless otherwise noted )  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
VGS = 0V, ID = 250uA  
D = 250uA, referenced to 25 °C  
Drain-Source Breakdown Voltage  
30  
-
-
-
-
V
Δ BVDSS  
Δ TJ  
/
Breakdown Voltage Temperature  
coefficient  
I
0.023  
V/°C  
V
V
DS = 30V, VGS = 0V  
-
-
-
-
-
-
-
-
1
uA  
uA  
nA  
nA  
IDSS  
Drain-Source Leakage Current  
DS = 24V, TC = 150 °C  
10  
VGS = 20V, VDS = 0V  
GS = -20V, VDS = 0V  
Gate-Source Leakage, Forward  
Gate-Source Leakage, Reverse  
100  
-100  
IGSS  
V
On Characteristics  
VGS(th)  
VDS = VGS, ID = 250uA  
GS =10 V, ID = 47.5A  
VGS =5 V, ID = 47.5A  
Gate Threshold Voltage  
1.0  
-
3.0  
V
V
Static Drain-Source On-state Resis-  
tance  
-
-
0.0065 0.0085  
0.0085 0.0115  
RDS(ON)  
Dynamic Characteristics  
Ciss  
Input Capacitance  
-
-
-
1015  
845  
1320  
1110  
240  
pF  
Coss  
Crss  
Output Capacitance  
V
GS =0 V, VDS =25V, f = 1MHz  
Reverse Transfer Capacitance  
185  
Dynamic Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-on Delay Time  
Rise Time  
-
-
-
-
-
-
45  
165  
70  
100  
340  
150  
290  
51  
VDD =15V, ID =95A, RG =50Ω  
see fig. 13.  
ns  
Turn-off Delay Time  
Fall Time  
(Note 4, 5)  
140  
39  
Qg  
Total Gate Charge  
Gate-Source Charge  
V
DS =24V, VGS =5V, ID =95A  
Qgs  
13  
-
nC  
Qgd  
Gate-Drain Charge(Miller Charge)  
-
18  
-
see fig. 12.  
(Note 4, 5)  
Source-Drain Diode Ratings and Characteristics  
Symbol  
IS  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
95  
Unit.  
Continuous Source Current  
Pulsed source Current  
Diode Forward Voltage  
Integral Reverse p-n Junction  
Diode in the MOSFET  
-
-
-
-
-
-
A
ISM  
380  
1.5  
VSD  
IS =95A, VGS =0V  
V
trr  
Reverse Recovery Time  
-
-
55  
65  
-
-
ns  
nC  
IS=95A,VGS=0V,dIF/dt=100A/us  
Qrr  
Reverse Recovery Charge  
NOTES  
1. Repeativity rating : pulse width limited by junction temperature  
2. L = 50 uH, I =95A, V = 15V, R = 0, Starting T = 25°C  
AS  
DD  
G
J
3. ISD 95A, di/dt 300A/us, V  
BV  
, Starting T = 25°C  
DSS J  
DD  
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%  
5. Essentially independent of operating temperature.  
6. Continuous Drain current calculated by maximum junction temperature ; limited by package  
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