SFB95N03L
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
10.0 V
8.0 V
102
101
100
10-1
6.0 V
5.0 V
4.5 V
4.0 V
102
3.5 V
175oC
25oC
Bottom : 3.0 V
-55oC
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 15V
2. 250µ s Pulse Test
101
10-1
100
101
0
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
20
15
10
5
102
101
100
10-1
VGS = 5V
VGS = 10V
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : T = 25℃
J
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
100
200
300
400
ID, Drain Current [A]
VSD, Source-Drain voltage[V]
Fig 5. Capacitance Characteristics
Fig 6. Gate Charge Characteristics
12
6000
C
iss=Cgs+Cgd(Cds=shorted)
oss=Cds+Cgd
Crss=Cgd
C
VDS = 15V
10
8
5000
4000
3000
2000
1000
0
VDS = 24V
※ Notes :
1. VGS = 0V
2. f=1MHz
6
C
iss
4
Coss
2
※ Note : ID = 95 A
Crss
0
0
5
10
15
20
25
30
35
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3/7
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
