SemiWell Semiconductor
SFB95N03L
Logic N-Channel MOSFET
Features
■ Low RDS(on) (0.0085Ω )@VGS=10V
2. Drain
Symbol
{
●
■ Low Gate Charge (Typical 39nC)
■ Low Crss (Typical 185pF)
◀
▲
●
●
1. Gate
{
■ Improved dv/dt Capability
■ 100% Avalanche Tested
{
3. Source
■ Maximum Junction Temperature Range (175°C)
General Description
2
D -PACK (TO-263)
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
2
1
3
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDSS
Drain to Source Voltage
30
V
A
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
(Note 6)
95
ID
67.3
380
A
A
V
IDM
(Note 1)
VGS
Gate to Source Voltage
±20
450
EAS
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 3)
mJ
V/ns
W
dv/dt
7.0
Total Power Dissipation(@TA = 25 °C) *
3.75
PD
150
W
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
1.0
W/°C
°C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
- 55 ~ 175
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Value
Symbol
Parameter
Units
Min.
Typ.
Max.
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
-
-
-
-
-
-
1.0
40
°C/W
°C/W
°C/W
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
1/7
Octorber, 2002. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
