2N2907A
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
10
8.0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
I
C
= -1.0 mA, R
s
= 430
Ω
-500
µA,
R
s
= 560
Ω
-50
µA,
R
s
= 2.7 kΩ
-100
µA,
R
s
= 1.6 kΩ
R
s
= OPTIMUM SOURCE RESISTANCE
NF, NOISE FIGURE (dB)
10
f = 1.0 kHz
8.0
6.0
4.0
2.0
0
NF, NOISE FIGURE (dB)
I
C
= -50
µA
-100
µA
-500
µA
-1.0 mA
0.5 1.0 2.0
5.0 10
20
50
100
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
R
s
, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
30
20
C, CAPACITANCE (pF)
C
eb
400
300
200
10
7.0
5.0
3.0
2.0
-0.1
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20
-30
C
cb
100
80
60
40
30
20
-1.0 -2.0
f T, CURRENT-GAIN
V
CE
= -20 V
T
J
= 25°C
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
-1.0
T
J
= 25°C
-0.8
V, VOLTAGE (VOLTS)
-0.6
-0.4
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200
-500
V
BE(sat)
@ I
C
/I
B
= 10
COEFFICIENT (mV/
°
C)
V
BE(on)
@ V
CE
= -10 V
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0
R
qVB
for V
BE
-5.0 -10 -20
-50 -100 -200 -500
R
qVC
for V
CE(sat)
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 5
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
