2N2907A
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
TYPICAL CHARACTERISTICS
3.0
hFE , NORMALIZED CURRENT GAIN
2.0
V
CE
= -1.0 V
V
CE
= -10 V
T
J
= 125°C
25°C
1.0
0.7
0.5
0.3
0.2
-0.1
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0
-10
-20
-30
-50 -70 -100
-200 -300 -500
-55°C
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
-0.8
-0.6
I
C
= -1.0 mA
-10 mA
-100 mA
-500 mA
-0.4
-0.2
0
-0.005
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2
-0.3 -0.5 -0.7 -1.0
I
B
, BASE CURRENT (mA)
-2.0
-3.0
-5.0 -7.0 -10
-20 -30
-50
Figure 4. Collector Saturation Region
300
200
100
70
50
30
20
10
7.0
5.0
3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
I
C
, COLLECTOR CURRENT
t
d
@ V
BE(off)
= 0 V
t
r
500
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
300
200
100
70
50
30
20
2.0 V
-200 -300 -500
10
7.0
5.0
-5.0 -7.0 -10
t′
s
= t
s
- 1/8 t
f
t
f
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
-20 -30
-50 -70 -100
-200 -300 -500
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
http://www.SeCoSGmbH.com
Figure 6. Turn–Off Time
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 5
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
