2N2907A
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= –0.1 mAdc, V
CE
= –10 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –10 Vdc)
(I
C
= –10 mAdc, V
CE
= –10 Vdc)
(I
C
= –150 mAdc, V
CE
= –10 Vdc)
(1)
(I
C
= –500 mAdc, V
CE
= –10 Vdc)
(1)
Collector–Emitter Saturation Voltage
(1)
(I
C
= –150 mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
Base–Emitter Saturation Voltage
(1)
(I
C
= –150 mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
h
FE
75
50
100
100
50
V
CE(sat)
—
—
V
BE(sat)
—
—
–1.3
–2.0
–0.3
–1.0
Vdc
—
—
—
300
—
Vdc
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(1), (2)
(I
C
= –50 mAdc, V
CE
= –20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= –10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= –2.0 Vdc, I
C
= 0, f = 1.0 MHz)
f
T
C
obo
C
ibo
200
—
—
—
8.0
30
MHz
pF
pF
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
Rise Time
Turn–Off Time
Storage Time
Fall Time
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
INPUT
Z
o
= 50
Ω
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-16 V
200 ns
50
1.0 k
INPUT
Z
o
= 50
Ω
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-30 V
200 ns
(V
CC
= –6.0 Vdc, I
C
= –150 mAdc,
6 0 Vd
150 Ad
I
B1
= I
B2
= –15 mAdc) (Figure 2)
(V
CC
= –30 Vdc, I
C
= –150 mAdc,
30 Vd
150 Ad
I
B1
= –15 mAdc) (Figures 1 and 5)
t
on
t
d
t
r
t
off
t
s
t
f
—
—
—
—
—
—
50
10
40
110
80
30
ns
ns
ns
ns
ns
ns
-30 V
200
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
+15 V
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
1.0 k
1.0 k
50
1N916
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 5
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
