2N2907A
Elektronische Bauelemente
RoHS Compliant Product
PNP Silicon
General Purpose Transistor
Features
Epitaxial Planar Die Construction
A suffix of "-C" specifies halogen & lead-free
TO–92
Complementary NPN Type Available 2N2222A
Ideal for Medium Power Amplification and Switching
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector±Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
–60
–60
–5.0
–600
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
2
BASE
3
EMITTER
1
2
3
COLLECTOR
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= –10 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –10
mAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –10
mAdc,
I
C
= 0)
Collector Cut-off Current
(V
CE
= –50 Vdc, V
EB(off)
= –0.5 Vdc)
Collector Cut-off Current
(V
CB
= –50 Vdc, I
E
= 0)
(V
CB
= –50 Vdc, I
E
= 0, T
A
= 150°C)
Emitter Cut-off Current
(V
EB
= –3.0 Vdc)
Collector Cut-off Current
(V
CE
= –35 V)
Base Cut-off Current
(V
CE
= –30 Vdc, V
EB(off)
= –0.5 Vdc)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
—
—
I
EBO
I
CEO
I
BEX
—
—
—
–0.10
–15
–100
–100
–50
nAdc
nAdc
nAdc
–40
–60
–5.0
—
—
—
—
–50
Vdc
Vdc
Vdc
nAdc
µAdc
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 5
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
