LC72121, 72121M, 72121V
Specifications
Absolute Maximum Ratings at Ta = 25°C, V
= V
= V
= 0 V
SSd
SSa
SSX
Parameter
Maximum supply voltage
Symbol
DD max
IN1 max CE, DI, CL, AIN
Conditions
Ratings
–0.3 to +7.0
–0.3 to +7.0
–0.3 to VDD +0.3
–0.3 to +15
–0.3 to +7.0
–0.3 to VDD +0.3
–0.3 to +15
0 to +6.0
Unit
V
V
VDD
V
V
V
V
Maximum input voltage
IN2 max XIN, FMIN, AMIN, IFIN
IN3 max IO1, IO2
V
V
VO1 max DO
V
Maximum output voltage
Maximum output current
Allowable power dissipation
VO2 max XOUT, PD
V
VO3 max BO1 to BO4, IO1, IO2, AOUT
V
IO1 max
IO2 max
DO, AOUT
mA
mA
mW
mW
mW
°C
°C
BO1 to BO4, IO1, IO2
0 to +10.0
350
DIP22S:
MFP24S:
SSOP24:
Pd max
(Ta ≤ 85°C)
200
150
Operating temperature
Storage temperature
Topr
Tstg
–40 to +85
–55 to +125
Allowable Operating Ranges at Ta = – 40 to +85°C, V
= V
= V
= 0 V
SSd
SSa
SSX
Ratings
Parameter
Symbol
VDD
Conditions
Unit
min
2.7
typ
max
3.6
Supply voltage
VDD
V
V
V
IH1
IH2
CE, DI, CL
IO1, IO2
0.7 VDD
6.5
13
Input high-level voltage
Input low-level voltage
Output voltage
V
0.7 VDD
0
V
VIL
CE, DI, CL, IO1, IO2
DO
0.3 VDD
6.5
V
VO1
VO2
0
V
BO1 to BO4, IO1, IO2, AOUT
0
13
V
f
IN1
IN2
XIN: VIN
1
1
8
MHz
MHz
MHz
MHz
MHz
mVrms
mVrms
mVrms
mVrms
mVrms
mVrms
mVrms
MHz
MHz
f
FMIN: VIN
2
10
2
160
40
Input frequency
fIN
3
AMIN (SNS = 1): VIN
3
4
f
IN4
IN5
AMIN (SNS = 0): VIN
0.5
0.4
200
20
40
40
40
40
70
10
f
IFIN: VIN
5
12
V
IN1
XIN: fIN
1
800
800
800
800
800
800
800
V
V
IN2-1
IN2-2
FMIN: f = 10 to 130 MHz
FMIN: f = 130 to 160 MHz
Input amplitude
V
IN3
IN4
AMIN (SNS = 1): fIN
AMIN (SNS = 0): fIN
IFIN: fIN5, IFS = 1
IFIN: fIN5, IFS = 0
XIN, XOUT: *1
3
V
4
V
V
IN5-1
IN5-2
4.5
Guaranteed crystal oscillator frequency
Xtal
XIN, XOUT: *2
7.2
Notes: 1. Recommended value for CI for the crystal oscillator element: CI < 120Ω
2. Recommended value for CI for the crystal oscillator element: CI < 70Ω
Electrical Characteristics in the Allowable Operating Ranges
Ratings
typ
Parameter
Internal feedback resistance
Internal pull-down resistance
Symbol
Conditions
Unit
min
max
Rf1
Rf2
XIN
1
MΩ
kΩ
kΩ
kΩ
kΩ
kΩ
V
FMIN
500
Rf3
AMIN
500
Rf4
IFIN
250
Rpd1
Rpd2
VHIS
FMIN
100
100
200
400
400
AMIN
200
Hysteresis
CE, DI, CL
PD: IO = –1 mA
0.1 VDD
Output high-level voltage
V
OH1
VDD – 1.0
V
Continued on next page.
No. 5815-4/22
SANYO [ SANYO SEMICON DEVICE ]
