S3C70F2/C70F4/P70F4
ELECTRICAL DATA
Table 14-4. Input/Output Capacitance
°
(TA = 25 C, VDD = 0 V )
Parameter
Input
Capacitance
Symbol
Condition
Min
Typ
Max
Units
CIN
f = 1 MHz; Unmeasured pins
are returned to VSS
–
–
15
pF
COUT
CIO
Output
Capacitance
15
15
pF
pF
I/O Capacitance
Table 14-5. Comparator Electrical Characteristics
(TA = – 40 C to + 85 C, VDD = 4.0 V to 5.5V, VSS = 0 V)
°
°
Parameter
Symbol
–
Condition
Min
Typ
Max
Units
VDD
Input Voltage Range
–
0
–
V
VREF
VDD
Reference Voltage
Range
–
0
–
V
VCIN
Input Voltage Accuracy
Input Leakage Current
–
–
–
–
–
mV
±150
ICIN
I
REF
– 3
3
mA
,
Table 14-6. A.C. Electrical Characteristics
(TA = – 40 C to + 85 C, VDD = 1.8 V to 5.5 V)
°
°
Parameter
Instruction Cycle
Time
Symbol
Conditions
Min
0.67
0.95
0
Typ
Max
Units
tCY
VDD = 2.7 V to 5.5 V
–
–
–
–
64
ms
VDD = 1.8 V to 5.5 V
VDD = 2.7 V to 5.5 V
VDD = 1.8 V to 5.5 V
VDD = 2.7 V to 5.5 V
VDD = 1.8 V to 5.5 V
fTI
TCL0 Input
1.5
1
MHz
MHz
ms
Frequency
tTIH, tTIL
TCL0 Input High,
Low Width
0.48
1.8
–
tKCY
VDD = 2.7 V to 5.5 V
800
–
ns
SCK Cycle Time
External SCK source
670
Internal SCK source
VDD = 1.8 V to 5.5 V
External SCK source
3200
3800
Internal SCK source
14-5
SAMSUNG [ SAMSUNG ]
