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KMM372F803BS 参数 Datasheet PDF下载

KMM372F803BS图片预览
型号: KMM372F803BS
PDF下载: 下载PDF文件 查看货源
内容描述: 8M X 72的DRAM DIMM ECC与使用8Mx8 , 4K 8K刷新, 3.3V [8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V]
分类和应用: 动态存储器
文件页数/大小: 20 页 / 468 K
品牌: SAMSUNG [ SAMSUNG ]
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KMM372F80(8)3BK/BS  
DRAM MODULE  
NOTES  
An initial pause of 200us is required after power-up followed  
by any 8 RAS-only or CAS-before-RAS refresh cycles before  
proper device operation is achieved.  
1.  
Either tRCH or tRRH must be satisfied for a read cycle.  
8.  
9.  
These parameters are referenced to the CAS leading edge in  
early write cycles.  
2. Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are ref-  
erence levels for measuring timing of input signals. Transi-  
tion times are measured between VIH(min) and VIL(max) and  
are assumed to be 5ns for all inputs.  
Operation within the tRAD(max) limit insures that tRAC(max)  
can be met. tRAD(max) is specified as reference point only. If  
tRAD is greater than the specified tRAD(max) limit, then  
access time is controlled by tAA.  
10.  
11.  
3.  
Measured with a load equivalent to 1 TTL loads and 100pF.  
If RAS goes high before CAS high going, the open circuit  
condition of the output is achieved by CAS high going. If CAS  
goes high before RAS high going , the open circuit condition  
of the output is achieved by RAS going.  
4. Operation within the tRCD(max) limit insures that tRAC(max)  
can be met. tRCD(max) is specified as a reference point only.  
If tRCD is greater than the specified tRCD(max) limit, then  
access time is controlled exclusively by tCAC.  
12.  
13.  
tASC ³ 6ns.  
5.  
6.  
Assumes tha tRCD³ tRCD(max).  
The timing skew from the DRAM to the DIMM resulted from  
the addition of buffers.  
This parameter defines the time at which the output achieves  
the open circuit condition and is not referenced to VOH or  
VOL.  
7. tWCS, tRWD, tCWD, tAWD and tCPWD are not restrictive operat-  
ing parameter. They are included in the data sheet as electri-  
cal characteristics only. If tWCS³ tWCS(min) the cycle is an  
early write cycle and the data out pin will remain high imped-  
ance for the duration of the cycle. If tRWD³ tRWD(min),  
tCWD³ tCWD(min), tAWD³ tAWD(min) and tCPWD³ tCPWD(min).  
The cycle is a read-modify-write cycle and the data out will  
contain data read from the selected cell. If neither of the  
above sets of conditions is satisfied, the condition of data  
out(at access time) is indeterminate.  
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